Quantum Radiation Division, Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan
Abstract:
It has been well known that the absorption maximum of the peak near 1080 cm−1 in amorphous SiO2 films shifts continuously with variation of thickness and properties such as stress. This is a first report on the oscillator strength of the absorption against frequency at the absorption maximum. SiO2 films on silicon wafers were prepared by thermal growth in either dry O2 or an O2/H2 mixture or liquid-phase deposition in HF saturated with silica gel. The oscillator strength continuously decreased from 1×10−4 down to 1×10−5 with the frequency shift from 1099 to 1063 cm−1.