Nonlinear theory of recombination waves in semiconductors

A nonlinear problem in the theory of recombination waves is solved for infinite sample and a bounded sample. The nonlinearity is generated by allowing for the small terms that are responsible for the motion of the nonequilibrium electron-hole plasma in the field of the recombination wave. The aim of the paper is to establish the nature of the excitation of recombination waves when the external electric field exceeds the threshold by an infinitesimally small amount. It is shown that the growth of the instability occurs in a soft regime. The frequency of the waves increases at the same time.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 67–70, September, 1980.