Quantum corrections to the resistivity of a new nanoobject, a two-dimensional layer at the “Tellurium Clusters-Opal Matrix” internal interface

The low-temperature anomalous magnetoresistance of a new nanoobject, a two-dimensional (2D) layer at an internal interface separating nanoclusters of undoped tellurium and a dielectric matrix (opal), is studied experimentally and theoretically. The 2D layer in the Te-opal structure is a regular array of spherical surfaces coated with a 2D hole conducting layer, i.e., a so-called interface bubble lattice. The specific features observed in the magnetoresistance agree qualitatively with the theory of quantum corrections to resistivity but manifest themselves in magnetic fields unexpectedly strong for this effect (up to 120 kOe). A method for calculating quantum corrections to resistivity is developed in terms of the theory describing the effect of weak localization of noninteracting particles. This method takes into account both the complex geometric structure of the object and the specific features of the Te electronic spectrum. The parameters characterizing the phase relaxation of the 2D holes are determined. The results obtained are compared with data available on 2D layers produced on a flat surface of single-crystal Te. The features revealed in the manifestation of weak localization in an array of 2D planes randomly oriented relative to the magnetic field are discussed.