| 含多层InAs量子点的双肖特基势垒二极管输运特性研究 |
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| 引用本文： | 李宏伟,王太宏. 含多层InAs量子点的双肖特基势垒二极管输运特性研究[J]. 物理学报, 2001, 50(12): 2506-2510 |
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| 作者姓名： | 李宏伟 王太宏 |
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| 作者单位： | 中国科学院物理研究所,北京100080 |
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| 基金项目： | 国家自然科学基金(批准号:69925410和19904015)资助的课题. |
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| 摘 要： | 研究了含多层InAs量子点结构的双肖特基势垒的电流输运特性,观察到了量子点的电子存储效应及其对电流的调制现象、电流多稳态现象和零点电压漂移现象.因为多量子点之间存在耦合作用,造成器件中的很多亚稳态.通过器件的输运特性显示出比含单层量子点器件更复杂的结果.随着外加电压的变化,器件经历很多弛豫过程.这些弛豫过程在电流电压曲线中造成很多电流跳跃结构和各种噪声结构关键词：多量子点迟滞现象单电子过程
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| 关 键 词： | 多量子点 迟滞现象 单电子过程 |
| 文章编号： | 1000-3290/2001/50(12)2506-05 |
| 收稿时间： | 2001-06-29 |
| 修稿时间： | 2001-08-04 |
CURRENT TRANSPORT THROUGH STACKED InAs QUANTUM DOTS EMBEDDED IN A SCHOTTKY BARRIER |
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| LI HONG-WEI and WANG TAI-HONG. CURRENT TRANSPORT THROUGH STACKED InAs QUANTUM DOTS EMBEDDED IN A SCHOTTKY BARRIER[J]. Acta Physica Sinica, 2001, 50(12): 2506-2510 |
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| Authors: | LI HONG-WEI and WANG TAI-HONG |
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| Abstract: | We have investigated the transport properties of a metal-semiconductor-metal structure containing multi-layers of InAs quantum dots from 77 K to room temperature. Three distinct phenomena are observed in the current voltage( I-V ) curves:the hysteresis loops, current jumps and voltage offsets. Because of the coupling between the multi layered quantum dots, the devices made of these quantum dots exhibit much more complicated phenomenon than the devices containing single-layer quantum dots. The devices may undergo many metastable states and relaxation processes. These processes would induce current jump structures and noise in the I-V curve. |
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| Keywords: | multi-layered quantum dots hysteresis loop single electron process |
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