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Zn-interstitial-enhanced ferromagnetism in Cu-doped ZnO films |
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| Authors: | TS Herng SP Lau SF Yu JS Chen KS Teng |
| Institution: | 1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;2. Data Storage Institute, 5 Engineering Drive 1, Singapore 117608, Singapore;3. Department of Material Science and Engineering, National University of Singapore, Singapore 119260, Singapore;4. Multidisciplinary Nanotechnology Centre, School of Engineering, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, UK |
| Abstract: | Copper-doped ZnO (ZnO:Cu) films exhibiting room-temperature (RT) ferromagnetism were prepared by filtered cathodic vacuum arc (FCVA) technique. The ZnO:Cu films deposited at RT showed the strongest magnetic moment of 0.40 μB/Cu as compared with the samples prepared at elevated temperatures. The observed strong ferromagnetism in the RT-deposited ZnO:Cu films could be partly associated with Zn-interstitial defects. The degradation of magnetic moment in the ZnO:Cu prepared at high temperatures and annealed at elevated temperatures might be attributed to the out-diffusion of Zn interstitials to the ZnO lattice. |
| Keywords: | 75 50 Dd 75 50 Pp 61 72 Vv 81 05 Dz |
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