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Effect of oxygen annealing on the Mn properties in ZnMnO Films |
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| Authors: | E Chikoidze Y Dumont HJ von Bardeleben J Gleize O Gorochov |
| Institution: | 1. Groupe d’Etude de la Matière Condensé CNRS, 1, Place Aristide Briand, 92195 Meudon Cedex, France;2. Material Science Department, Tbilisi State University, Chavchavadze Ave 3, 0027 Tbilisi, Georgia;3. Institut des NanoSciences de Paris—INSP, Universités Paris, 6&7/UMR 7588 au CNRS, Paris, France;4. Laboratoire de Physique des Milieux Denses, Université de Metz, Metz cedex 3, France |
| Abstract: | We studied the influence of thermal annealing in oxygen on the physical properties of MOCVD grown Zn1−xMnxO thin layers. Annealing in the 300–1000 °C temperature range modifies both lattice parameters and magnetic properties of the layers. Correlation of the results from X-ray diffraction, EPR studies and Raman spectroscopy indicate a modification of the Mn+2-related features in the ZnO matrix. |
| Keywords: | 75 50 Pp 81 15 Gh 82 80 Ej 75 50 Ee |
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