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Spin polarized La0.7Sr0.3MnO3 thin films on silicon
Authors:I. Bergenti  V. Dediu  E. Arisi  M. Cavallini  F. Biscarini  C. Taliani  M.P. de Jong  C.L. Dennis  J.F. Gregg  M. Solzi  M. Natali
Affiliation:1. ISMN-Bo CNR, via Gobetti 101, 40129 Bologna, Italy;2. Department of Physics, IFM, Linköping University, S-581 83 Linköping, Sweden;3. Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom;4. Department of Physics and INFM, Parco Area delle Scienze 7/a 43100 Parma, Italy;5. ICIS CNR, Corso Stati Uniti 4, 35127 Padova, Italy
Abstract:La0.7Sr0.3MnO3 polycrystalline manganite thin films were grown on silicon (Si) substrates covered by SiOx amorphous native oxide. Curie temperatures of about 325 K were achieved for 70-nm-thick films. Strong room temperature XMCD signal was detected indicating high spin polarization at the surface. Cross-sectional TEM images show sharp interface between SiOx and manganite without signature of chemical reaction at the interface. Unusual sharp splitting of the manganite film was observed: on the top of a transition layer characterized by low crystalline order, a magnetically robust layer is formed.
Keywords:Manganite   Spintronics   Interface
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