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Bi-induced vibrational modes in GaAsBi |
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| Authors: | M.J. Seong S. Francoeur S. Yoon A. Mascarenhas S. Tixier M. Adamcyk T. Tiedje |
| Affiliation: | aNational Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, USA;bAMPEL, Department of Physics and Astronomy, University of British Columbia, Vancouver, BC V6T 1Z4, Canada;cDepartment of Physics, Chung-Ang University, Seoul 156-756, Republic of Korea;dDivision of Nano Sciences and Department of Physics, Ewha Womans University, Seoul 120-750, Republic of Korea |
| Abstract: | We have studied GaAs1−xBix (up to x3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm−1 and 214 cm−1 with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at 214 cm−1 is identified as originating from substitutional Bi at the As site in GaAsBi. |
| Keywords: | Isoelectronic impurity GaAsBi Raman scattering Phonon |
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