Antimony-doped tin(IV) oxide: Surface composition and electronic structure |
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| Authors: | R.G. Egdell W.R. Flavell P. Tavener |
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| Affiliation: | Inorganic Chemistry Laboratory, South Parks Road, Oxford OX1 3QR, United Kingdom |
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| Abstract: | Antimony-doped tin(IV) oxide Sn1?xSbxO2 prepared by a high-temperature (1300 K) solid-state synthetic procedure has been studied over the composition range0 < x < 0.03by X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and high-resolution electron-energy-loss spectroscopy (HREELS). Pronounced enrichment by antimony close to the surface is evident from XPS with a heat of segregation approaching 30 kJ/mole. However, no increase in the surface free-carrier concentration is evident from the conduction-to-valence band intensity ratio in UPS or from the surface plasmon frequency in EELS. It is concluded that electrons associated with segregated Sb ions occupy a lone-pair-likesp hybrid surface state whose energy lies well below that of the conduction band. |
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| Keywords: | To whom correspondence and proofs should be addressed: Department of Chemistry Imperial College of Science and Technology South Kensington London SW7 2AY United Kingdom. |
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