Unusual effects of anisotropic bonding in Cu(II) and Ni(II) oxides with K2NiF4 structure |
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Authors: | K.K. Singh P. Ganguly J.B. Goodenough |
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Affiliation: | Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, India |
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Abstract: | Geometric constraints present in A2BO4 compounds with the tetragonal-T structure of K2NiF4 impose a strong pressure on the BOIIB bonds and a stretching of the AOIA bonds in the basal planes if the tolerance factor is , where RAO and RBO are the sums of the AO and BO ionic radii. The tetragonal-T phase of La2NiO4 becomes monoclinic for Pr2NiO4, orthorhombic for La2CuO4, and tetragonal-T′ for Pr2CuO4. The atomic displacements in these distorted phases are discussed and rationalized in terms of the chemistry of the various compounds. The strong pressure on the BOIIB bonds produces itinerant bands and a relative stabilization of localized dz2 orbitals. Magnetic susceptibility and transport data reveal an intersection of the Fermi energy with the d2z2 levels for half the copper ions in La2CuO4; this intersection is responsible for an intrinsic localized moment associated with a configuration fluctuation; below 200 K the localized moment smoothly vanishes with decreasing temperature as the d2z2 level becomes filled. In La2NiO4, the localized moments for half-filled dz2 orbitals induce strong correlations among the electrons above ; at lower temperatures the electrons appear to contribute nothing to the magnetic susceptibility, which obeys a Curie-Weiss law giving a μeff corresponding to , but shows no magnetic order to lowest temperatures. These surprising results are verified by comparison with the mixed systems La2Ni1?xCuxO4 and La2?2xSr2xNi1?xTixO4. The onset of a charge-density wave below 200 K is proposed for both La2CuO4 and La2NiO4, but the atomic displacements would be short-range cooperative in mixed systems. The semiconductor-metallic transitions observed in several systems are found in many cases to obey the relation , where and Tmin is the temperature of minimum resistivity ?. This relation is interpreted in terms of a diffusive charge-carrier mobility with at T = Tmin. |
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