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Unusual effects of anisotropic bonding in Cu(II) and Ni(II) oxides with K2NiF4 structure
Authors:K.K. Singh  P. Ganguly  J.B. Goodenough
Affiliation:Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, India
Abstract:Geometric constraints present in A2BO4 compounds with the tetragonal-T structure of K2NiF4 impose a strong pressure on the BOIIB bonds and a stretching of the AOIA bonds in the basal planes if the tolerance factor is t ? RAO√2 RBO < 1, where RAO and RBO are the sums of the AO and BO ionic radii. The tetragonal-T phase of La2NiO4 becomes monoclinic for Pr2NiO4, orthorhombic for La2CuO4, and tetragonal-T′ for Pr2CuO4. The atomic displacements in these distorted phases are discussed and rationalized in terms of the chemistry of the various compounds. The strong pressure on the BOIIB bonds produces itinerant σ1x2?y2 bands and a relative stabilization of localized dz2 orbitals. Magnetic susceptibility and transport data reveal an intersection of the Fermi energy with the d2z2 levels for half the copper ions in La2CuO4; this intersection is responsible for an intrinsic localized moment associated with a configuration fluctuation; below 200 K the localized moment smoothly vanishes with decreasing temperature as the d2z2 level becomes filled. In La2NiO4, the localized moments for half-filled dz2 orbitals induce strong correlations among the σ1x2?y2 electrons above Td ? 200 K; at lower temperatures the σ1x2?y2 electrons appear to contribute nothing to the magnetic susceptibility, which obeys a Curie-Weiss law giving a μeff corresponding to S = 12, but shows no magnetic order to lowest temperatures. These surprising results are verified by comparison with the mixed systems La2Ni1?xCuxO4 and La2?2xSr2xNi1?xTixO4. The onset of a charge-density wave below 200 K is proposed for both La2CuO4 and La2NiO4, but the atomic displacements would be short-range cooperative in mixed systems. The semiconductor-metallic transitions observed in several systems are found in many cases to obey the relation Ea ? kTmin, where ? = ?0exp(?EakT) and Tmin is the temperature of minimum resistivity ?. This relation is interpreted in terms of a diffusive charge-carrier mobility with Ea ? ΔHm ? kT at T = Tmin.
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