INVESTIGATION OF BONDING IN NANO—SiO2 BY Si L2,3 X—RAY ABSORPTION NEAR—EDGE STRUCTURE SPECTROSCOPY |
| |
作者姓名: | Z.Y.Wu K.Ibrahim G.Li J.Zhang F.Q.Liu M.I.Abbas R.Hu H.J.Qian |
| |
作者单位: | [1]BeijingSynchrotronRadiationFacility.InstituteofHighEnergyPhysics,TheChineseAcademyofSciences,Beijing100039,China [2]TechnicalInstituteofPhysicsandChemistry.TheChineseAcademyofSciences,Beijing100101,China |
| |
摘 要: | The Si L2,3 X-ray absorption near-edge structure(XANES) can be used to probe the local structure around Si and derive electronic information of the unoccupied s- and d-like partial density of states in nano-size SiO2.We present Si L2,3-edge for three different size silicates acquired by total electron yield(TEY) at the photoemission atation of Beijing Synchrotron Radiation Facility (BSRF).The Si L2,3-edge spectra are interpreted based on ab initio full multiple-scattering(MS) calculation.The Si L2,3-edge of nano-size materials has XANES similar to that of α-quartz.The similarities between the Si L2,3-edge shapes attest to a common molecular-orbital picture of their Si-O bonding and the same coordination state.However,a considerable broadening of Si L2,3-edge XANES spectra as decrease of particle size is also an indicative of polyhedral distortions.
|
关 键 词: | SiO2 X射线近边吸收谱 电子结构 XANES 二氧化硅 超细粒子 |
本文献已被 维普 等数据库收录! |
|