High field stressing effects on the split N2O grown thingate dielectric by rapid thermal processing |
| |
Authors: | Subrahmanyam PVS Prabhakar A Vasi J |
| |
Institution: | ITI Ltd., Bangalore; |
| |
Abstract: | Highly reliable thin oxynitride layers of very good Si-SiO2 interface endurance were grown on silicon wafers with a split N 2O cycle (N2O/O2/N2O) employing rapid thermal processing (RTP). Excellent electrical characteristics with reduced positive charge generation, electron trapping and/or interface state generation were achieved under high field stressing compared to pure N2O dielectric |
| |
Keywords: | |
|
|