Determination of the inelastic mean-free-path and mean inner potential for AlAs and GaAs using off-axis electron holography and convergent beam electron diffraction. |
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Authors: | Suk Chung David J Smith Martha R McCartney |
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Affiliation: | School of Materials, Arizona State University, Tempe, AZ 85287, USA. |
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Abstract: | The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 +/- 4 nm and 67 +/- 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 +/- 0.7 V and 14.0 +/- 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error. |
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