Depth profiling a III–V multilayered structure with an excimer laser |
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| Authors: | O L Bourne D'Arcy Hart D M Rayner P A Hackett |
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| Institution: | (1) Steacie Institute for Molecular Science, National Research Council of Canada, 100 Sussex Drive, K1A 0R6 Ottawa, Ontario, Canada;(2) Present address: MPB Technologies Inc., 1725 North Service Rd., Trans. Canada Highway, Dorval, Quebec, Canada |
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| Abstract: | A multilayered structure of GaAs and AlGaAs was depth profiled using the technique of digital etching. A single excimer laser (KrF) was used to control the etch rate and to identify each layer by monitoring the Ga ions generated during the desorption process. The Ga ions were the only ions observed and were only generated when the photon flux was in the GaAs layer. The etch rate, 0.9 monolayers (2.5 Å) per pulse, was constant with depth. The overall layer recognition resolution was 45 monolayers. |
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| Keywords: | 81 60 82 65 82 80 |
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