| 使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究 |
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| 引用本文： | 徐瑞霞,陈子楷,赵铭杰,宁洪龙,邹建华,陶洪,王磊,徐苗,彭俊彪. 使用铜源漏电极的非晶氧化铟锌薄膜晶体管的研究[J]. 发光学报, 2015, 36(8): 935-940. DOI: 10.3788/fgxb20153608.0935 |
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| 作者姓名： | 徐瑞霞 陈子楷 赵铭杰 宁洪龙 邹建华 陶洪 王磊 徐苗 彭俊彪 |
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| 作者单位： | 1. 广州新视界光电科技有限公司, 广东 广州 510730;2. 华南理工大学 发光材料与器件国家重点实验室, 广东 广州 510641;3. 华南理工大学 电子与信息学院, 广东 广州 510641 |
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| 基金项目： | 广东省引进创新科研团队计划，中国科学院红外物理国家重点实验室开放课题，国家自然科学基金重点项目，国家自然科学基金面上项目，国家自然科学基金青年基金，中央高校基本科研业务费，广州市科技计划 |
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| 摘 要： | 为了实现氧化物薄膜晶体管(TFT)的低电阻布线,采用Cu作为氧化物TFT的源漏电极。通过优化成膜工艺制备了电阻率低至2.0μΩ·cm的Cu膜,分析了Cu膜的晶体结构、粘附性及其与a-IZO薄膜的界面,制备了以a-IZO为有源层和Cu膜的粘附层的TFT器件。结果表明:所制备的Cu膜呈多晶结构;引入a-IZO粘附层增强了Cu膜与衬底的粘附性;同时,Cu在a-IZO中的扩散得到了抑制。所制备的TFT的迁移率、亚阈值摆幅和阈值电压分别为12.9 cm2/(V·s)、0.28 V/dec和-0.6 V。
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| 关 键 词： | 薄膜晶体管 氧化铟锌 铜布线 |
| 收稿时间： | 2015-04-02 |
Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes |
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| XU Rui-xia,CHEN Zi-kai,ZHAO Ming-jie,NING Hong-long,ZOU Jian-hua,TAO Hong,WANG Lei,XU Miao,PENG Jun-biao. Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes[J]. Chinese Journal of Luminescence, 2015, 36(8): 935-940. DOI: 10.3788/fgxb20153608.0935 |
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| Authors: | XU Rui-xia CHEN Zi-kai ZHAO Ming-jie NING Hong-long ZOU Jian-hua TAO Hong WANG Lei XU Miao PENG Jun-biao |
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| Affiliation: | 1. Guangzhou New Vision Optoelectronic Co., Ltd., Guangzhou 510730, China;2. State Key Laboratory of Luminescent Materials and Devices, Guangzhou 510641, China;3. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China |
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| Abstract: | Cu was used as the source/drain (S/D) electrodes of amorphous indium-zinc-oxide (a-IZO) thin-film transistors (TFTs) in order to realize low-resistance metallization in oxide thin film transistors. Cu film with a resistivity as low as 2.0 μΩ·cm was deposited by optimizing the sputtering process. The crystal structure, adhesive property of Cu film as well as the interfaces of Cu/a-IZO were investigated. In addition, a-IZO TFTs with Cu S/D electrodes were fabricated. The Cu films were polycrystalline. The adhesion of Cu to glass substrate was enhanced by introducing an a-IZO film. Meanwhile, the diffusion of Cu atoms was suppressed in a-IZO. The fabricated TFT exhibited a saturated mobility of 12.9 cm2/(V·s), a subthreshold voltage of 0.28 V/dec and a threshold voltage of -0.6 V. |
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| Keywords: | thin-film transistor indium-zinc-oxide copper metallization |
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