Low-noise wide-band hot-electron bolometer mixer based on an NbN film |
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| Authors: | S A Ryabchun I V Tretyakov I V Pentin N S Kaurova V A Seleznev B M Voronov M I Finkel S N Maslennikov and G N Gol’tsman |
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| Institution: | (1) Group for Advanced Receiver Development (GARD), Department of Earth and Space Sciences, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden |
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| Abstract: | We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate.
The double-sideband noise temperature of the mixer is 750K at a frequency of 2.5 THz. The conversion efficiency measurements
show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5GHz for
a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element
and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process. |
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