An organic p-type dopant with high thermal stability for an organic semiconductor |
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| Authors: | Gao Zhi Qiang Mi Bao Xiu Xu Gui Zhen Wan Yi Qian Gong Meng Lian Cheah Kok Wai Chen Chin H |
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| Affiliation: | Centre for Advanced Luminescence Materials, Hong Kong Baptist University, Kowloon, Hong Kong, P. R. China. |
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| Abstract: | To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant. |
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