Photoluminescence Properties of a Promising Red-emitting Phosphor CaNb2O6:EU3+for Trichromatic White Light Emitting Diodes Application |
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Authors: | Huang Junli Zhou Liya He Xipu Gong Fuzhong |
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Institution: | 1. School of Chemistry and Chemical Engineering, Guangxi University, Nanning, Guangxi 530004, China;2. Research and Quality Detection Center, Gongdong Evergreen Group Co., Ltd., Zhanjiang, Guangdong 524094, China |
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Abstract: | Motivated by the need for new phosphors of white light emitting diode (WLED) application, Ca0.95Nb2 O6:Eu3+0.05 phosphors were synthesized by high temperature solid‐state reaction. Increasing the content of doped‐Eu3+ and adding the co‐activator Bi3+ to improve the photoluminescence (PL) intensity of Ca1?xNb2 O6Eu3+x phosphors were investigated in detail. The effects of Eu3+ were better than that of Bi3+ on the PL intensity of Ca1?xNb2 O6Eu3+x phosphors. Compared with Y2O2 S:0.05Eu3+ the Ca0.70Nb2 O6:Eu3+0.03 phosphor could be excited efficiently by UV (395 nm) light and emit the red light at 614 nm with line spectra, which were coupled well with the characteristic emission from UV‐Near UV LED. The CIE (International Commission on Illumination) chromaticity coordinates (x?0.654, y?0.348) of Ca0.70Nb2O6:Eu3+0.03 were close to the NTSC (National Television Standard Committee) standard values. Therefore Ca0.70Nb2 O6:Eu3+0.03 might find application to UV‐Near UV InGaN chip‐based white light emitting diodes, which is further proved by the LED fabrication with the Ca0.70Nb2 O6:Eu3+0.03 phosphor. |
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Keywords: | phosphor luminescence X‐ray diffraction |
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