钛-硅系快速热退火固相反应机制的研究

钛膜在10^-7Torr真空中用电子束蒸发沉积在硅单晶片上,以快速热退火方式进行团相反应。转靶X射线衍射分析发现,540—600℃退火后,有两个亚稳相Ti₅Si₄的衍射峰。延长退火时间,第一成核相Ti₅Si₄可持续存在到钛被消耗完,随即转变成稳定相TiSi₂。退火温度高于640℃,形成稳定相TiSi₂。薄层电阻和喇曼散射的测量研究结果表明,与X射线衍射有很好的对应。207和244cm^-1波数处的两个喇曼峰为TiSi₂的特征喇曼峰,而270,297和341cm^-1的三个喇曼峰似乎是由Ti₅Si₄引起。关键词：

INVESTIGATION OF MECHANISM FOR SOLID PHASE REACTION BY RAPID THERMAL ANNEALING IN Ti-Si SYSTEM

Titanium films are deposited on Si wafers by electron-beam evaporation in vacuum, the base pressure of the system is 10^-7 Torr. Solid phase reaction results through rapid thermal annealing. After annealed at 540-600℃, two metastable phase diffraction peaks of Ti₅Si₄ are observed in X-ray diffraction (XRD) pattern. Prolonging the annealing time, the first nucleated phase Ti₅Si₄ remains unchanged until titanium is completely consumed, then it transforms into a stable phase TiSi₂. When the annealing tcmpeiature is above 640℃, a stable phase TiSi₂ is formed. The researches of sheel resistance and Raman scattering give the results which are in good agreement with XRD. The two Raman peaks at 207 and 244 cm^-1 are characteristic Raman peaks of TiSi₂, but the other three Raman peaks at 270, 297 and 341 cm^-1 are likely attributed