Preparation of highly photoconductive amorphous silicon by rf sputtering |
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| Authors: | TD Moustakas DA Anderson William Paul |
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| Institution: | Division of Applied Sciences, Harvard University Cambridge, Massachusetts 02138, U.S.A. |
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| Abstract: | The photoconductivity of hydrogenated rf sputtered amorphous Si has been determined as a function of the partial pressure of hydrogen in the sputtering gas and of deposition temperatures up to 450°C. The data can be used to choose conditions for preparing material with large photoresponse and small defect state density. |
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