Electronic properties of Semi-Insulating Polycrystalline-Silicon (SIPOS) doped with oxygen atoms

The temperature dependence of the electrical conductivity of SIPOS shows that there are two kinds of conduction mechanisms, conduction in extended states and hopping conduction through localized states dominant above and below room temperature, respectively. The change in the conductance of a SIPOS film due to a transverse electric field can well be understood by the CFO model of amorphous semiconductors and indicates that the Fermi level in the thermal equilibrium is near the midgap, and the results show the density of localized states at the Fermi level to be about 10²⁰ cm^?3 eV^?1.