| 场助InGaAsP/InP异质结半导体光电阴极的研究 |
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| 引用本文： | 李晋闽,郭里辉,侯洵,王存让,张工力.场助InGaAsP/InP异质结半导体光电阴极的研究[J].光学学报,1992,12(6):528-532. |
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| 作者姓名： | 李晋闽 郭里辉 侯洵 王存让 张工力 |
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| 作者单位： | 中国科学院西安光学精密机械研究所 西安710068中国科学院半导体研究所工作北京100083
(李晋闽)，中国科学院西安光学精密机械研究所 西安710068
(郭里辉，侯洵，王存让)，中国科学院西安光学精密机械研究所 西安710068(张工力) |
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| 摘 要： | 本文通过对InGaAsP/InP场助异质结半导体光电阴极的材料生长、场助肖特基结的制备及阴极激活等工艺的系统研究,研制出具有较高光谱响应的半导体光电阴极,生长出优于文献报道的晶格失配率标准的材料,得到相当80年代国际水平理想因子值的场助肖特基结,用实验数据介绍提高量子效率数量级的方法和条件.研究结果表明场助异质半导体光电阴极是在红外波段很有潜力的光电发射体.
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| 关 键 词： | 场助阴极 InGaAaP/InP异质结构 |
| 收稿时间： | 1991/2/4 |
Field-assisted semiconductor photocathode with InGaAsP/InP heterojunction |
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| Li JINMIN,GUO LIHUI,HOU XUN,WANG CUNRANG AND ZHANG GONGLI.Field-assisted semiconductor photocathode with InGaAsP/InP heterojunction[J].Acta Optica Sinica,1992,12(6):528-532. |
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| Authors: | Li JINMIN GUO LIHUI HOU XUN WANG CUNRANG AND ZHANG GONGLI |
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| Abstract: | The material growth, preparation of Schottky junction and activation technique for a field-assisted heterojunction semiconductor photocathode with 1.25μm threshold have been studied in detail. The photocathode with higher response in the wavelength range from 0.9μm to 1.25μm has been achieved. Utilizing the LPE technology, the material of heterojunction field-assisted photocathode has been obtained with the mismatch rate better than -1.23×10-4. The optimum value (n=1.08) of ideal factor for the field-assisted Schottky junction has been obtained in the UHV system. At 4.5 V bias, the quantum efficiency is 2.5×10-4 at 1.25 μm, which is nearly 2 orders of magnitude higher than that of Ag-O-Cs (S-1) photocathodes at same wavelength. |
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| Keywords: | field-assisted photocathode InGaAsP/ InP heterojunction |
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