Study of the metastable region in the growth of GaN using the Na flux method |
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Authors: | Fumio Kawamura Masanori Morishita Naoya Miyoshi Mamoru Imade Masashi Yoshimura Yasuo Kitaoka Yusuke Mori Takatomo Sasaki |
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Institution: | aGraduate School of Electrical Engineering, Osaka University, Suita, Yamadaoka 2-1, 565-0871, Japan |
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Abstract: | It was revealed that the metastable region, in which liquid phase epitaxy (LPE) of GaN single crystals proceeds without the generation of polycrystals, expands with growth temperature in the Na flux method. The metastable region appears when LPE growth proceeds at temperatures above 1073 K, although generation of polycrystals inevitably occurs on a crucible at temperatures less than 1073 K. The highest growth rate of 14 μm/h in a small experimental setup was achieved at a temperature of 1163 K with a nitrogen pressure of 5.5 MPa due to complete suppression of the growth of polycrystals on a crucible, even though the supersaturation at this condition reached a fairly high level.Also, an LPE crystal with a flat surface could easily be obtained under high-temperature conditions. |
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Keywords: | A1 Nucleation A1 Crystal morphology A3 Liquid phase epitaxy B1 Nitride B1 Single crystal |
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