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Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors |
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| Authors: | O. Mounkachi A. El Kenz E.H. Saidi |
| Affiliation: | a Laboratoire de Magnétisme et de Physique des Hautes Energies, Département de physique, Faculté des sciences, B.P. 1014, Rabat, Morocco b Laboratoire de Physique des Hautes Energies, Département de physique, Faculté des sciences, B.P. 1014, Rabat, Morocco c Hassan II Academy of Sciences and Technology, Rabat, Morocco d The Institute of Nanotechnology, INANOTECH, Rabat, Morocco |
| Abstract: | By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated. |
| Keywords: | First-principle calculations Diluted magnetic semiconductors Acceptor defect p-type (Ga,Fe)N n-type (Ga,Fe)N |
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