Observation of large magnetic resistance in weak magnetic fields using CuPt/SiO2/Si/SiO2/CuPt structure |
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Authors: | H. Hajghassem A.R. Erfanian |
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Affiliation: | a Electrical Engineering Department, Shahid Beheshti University, Tehran, Iran b Electrical Engineering Department, K.N. Toosi University, Tehran, Iran c Islamic Azad University, Qombranch, Iran d Electronic Research Center, Tehran, Iran |
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Abstract: | The magnetoresistive effect of CuPt(8 nm)/SiO2(5 nm)/Si(50,000 nm)/SiO2(5 nm)/CuPt(8 nm) structure made by e-beam evaporation technique is studied in this work. Variation in magnetoresistance obtained by I-V measurements at 77 K and in the presence of less than 5 mT magnetic field applied in parallel to the surface is investigated. We have found that this structure exhibit large magnetoresistance in low magnetic fields (i.e. <5 mT). Our results also indicate that the variation in magnetoresistance in the presence of external magnetic field has oscillatory behavior and has the maximum value of 3295%. This structure due to its high sensitivity to low magnetic fields can also be used as an active element in magnetic field sensor devices. |
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Keywords: | Cu-Pt structure Low magnetic field sensor I-V curve Large magnetoresistance |
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