Phonon-assisted auger recombination in quantum well semiconductors |
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Authors: | A Haug |
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Institution: | (1) Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Fed. Rep. Germany;(2) Present address: Empfing 15, D-8220 Traunstein, Fed. Rep. Germany |
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Abstract: | Phonon-assisted Auger recombination (AR) is shown to be an important loss mechanism in a quantum well semiconductor in addition to the direct AR. Theoretical investigations demonstrate that it is of the same order of magnitude and has the same temperature dependence as in bulk material, just as direct AR, provided that the material parameters and the carrier concentrations are the same as in the bulk. |
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Keywords: | 79 20Fv 73 20Dx 42 55Px |
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