A single red InGaN-based light-emitting diode with a europium (III) ternary complex as mono-phosphor |
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Authors: | Xiang Nengjun Xu Yong Wang Zhengliang Wang Xiaoxiao Leung Louis M Wang Jing Su Qiang Gong Menglian |
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Institution: | Research branch of R&D Center of Hongta Tobacco (GROUP)Co., Ltd., Yunnan 653100, China. xnj3511@sohu.com |
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Abstract: | A novel europium (III) ternary complex, Eu(TPBDTFA)(3)Phen, was designed and synthesized. Photoluminescence measurements show that the energy absorbed by the organic ligands was efficiently transferred to the central Eu(3+) ions, and the complex exhibits strongly red emission due to the (5)D(0)-(7)F(j) transitions of Eu(3+) ions with appropriate CIE (Commission Internationale de l'Eclairage, International Commission on Illumination) chromaticity coordinates (x=0.66, y=0.33) under 310-420 nm light excitation. The luminescence quantum yield for the Eu(3+) complex is 0.18. Thermogravimetric analysis (TGA) confirms a high thermal stability of the complex with a decomposition temperature of 341 degrees C. All the characteristics indicate that the Eu(3+) complex is a highly efficient red phosphor suitable to be excited by near UV light. An intense red-emitting LED was fabricated by combining the mono-phosphor Eu(TPBDTFA)(3)Phen with a approximately 395 nm emitting InGaN chip. |
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