| 一种新的自旋量子效应——电流感应磁化翻转 |
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| 引用本文： | 任敏,陈培毅,张磊,胡九宁,邓宁.一种新的自旋量子效应——电流感应磁化翻转[J].微纳电子技术,2006,43(12):553-557,581. |
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| 作者姓名： | 任敏 陈培毅 张磊 胡九宁 邓宁 |
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| 作者单位： | 清华大学,微电子学研究所,北京,100084 |
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| 基金项目： | 清华大学校科研和教改项目 |
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| 摘 要： | 电流感应的磁化翻转效应是近年来继巨磁阻效应(GMR)和隧道磁阻效应(TMR)之后提出的一种nm尺度下新的自旋相关效应,在无外加磁场的情况下,垂直于铁磁层平面的自旋极化电流就能引起铁磁层的磁化翻转。该效应有望被用于制作新型的电流操纵磁存储器件。报道了该效应的理论和实验的研究进展。
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| 关 键 词： | 电流感应磁化翻转 自旋相关效应 赝自旋阀 |
| 文章编号： | 1671-4776（2006）12-0553-05 |
| 收稿时间： | 2006-05-23 |
| 修稿时间： | 2006-05-23 |
A Novel Spin-Dependent Quantum Effect: Current-Induced Magnetization Switching |
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| REN Min,CHEN Pei-yi,ZHANG Lei,HU Jiu-ning,DENG Ning.A Novel Spin-Dependent Quantum Effect: Current-Induced Magnetization Switching[J].Micronanoelectronic Technology,2006,43(12):553-557,581. |
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| Authors: | REN Min CHEN Pei-yi ZHANG Lei HU Jiu-ning DENG Ning |
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| Institution: | Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | A novel spin-dependent effect,current-induced magnetization switching(CIMS),was put forward in recent years after giant magnetoresistive(GMR)and tunneling magnetoresistive(TMR)effects. According to CIMS effect,the magnetization of ferromagnetic film can be switched by a spin-polarized current perpendicular to the film plane,without external magnetic field. Therefore,it is promising that a new type of magnetic random access memory operated only by current can be realized based on this effect. The progresses on its theories and experiments were introduced. |
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| Keywords: | current-induced magnetization switching spin-dependent effect pseudo-spin-valve |
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