|
|||||
|
|
Buried waveguide double-heterostructure PbEuSe-lasers grown by MBE |
|
| Institution: | 1. Space Science Institute, 4750 Walnut Street, Suite 205, Boulder, CO, 80301, USA;2. Department of Astronomy, University of Maryland, College Park, MD, 20742, USA;3. Department of Astronomy, University of Virginia, P.O. Box 400325, Charlottesville, VA, 22904-4325, USA;4. Samuel Glenn College of Engineering, Auburn University, Auburn, AL, 36849, USA;5. Planetary Science Institute, 1700 East Fort Lowell Rd., Suite 106, Tucson, AZ, 85719-2395, USA;1. Ioffe Physical–Technical Institute, St. Petersburg, Russia;2. Technical University of Madrid, Madrid, Spain;3. Imperial College, London, UK |
| Abstract: | Buried heterostructure (BH) lasers with a PbSe active layer and Pb0.97Eu0.03Se confinement layers were fabricated using molecular beam epitaxy (MBE). The waveguide was defined by photolithography and an ion milling process. By MBE overgrowth of the etched structure with a PbEuSe layer the BH-laser was formed.The lasers operated cw with low threshold currents (8 mA at 80 K) in the spectral range from 1280 cm?1 (30 K) to 1800 cm?1 (160K). The spectral characteristics of these lasers were superior to comparable DH stripe lasers. These lasers were the first with IV/VI-MBE overgrowth process of etched lateral structures. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |