IR optical absorption and reflection spectra in narrow gap semiconductors |
| |
| Institution: | 1. College of Electronic Information and Optical Engineering and Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China;2. Key Laboratory of Optical Information Science and Technology, Institute of Modern Optics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China;1. Department of Physics, Arab-American University, Jenin, Palestine;2. Groups of Physics Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;3. Department of Telecommunications Engineering, Arab-American University, Jenin, Palestine;1. Department of Physics, Indian Institute of Technology (BHU), Varanasi, 221005, India;2. Chemistry Division, Mod. Labs., Bhabha Atomic Research Centre, Trombay, Mumbai, 400085, India |
| |
| Abstract: | Light transmission T(λ) and reflection R(λ) spectra were measured for the crystals CdxHg1−xTe (x = 0.26). InSb and MnxHg1−xTe (x = 0.12) with low impurity content at T = 300 K in the wavelength range 2.5 μm ⩽ λ ⩽40 μm. From the measured T(λ) and R(λ) data a dependence of the absorption coefficient x(λ) for the free-carriers light absorption (FCLA) was derived, which is caused by the intrabund electron and hole transitions and the intcrband transitions of the heavy holes from the band V1 to the band V2 of the light holes: x(λ) = xintraband(λ) + xinterband(λ).It is concluded from the quantum mechanical approach that the intraband FCLA is directly related with the carriers scattering mechanisms. Calculations of xintraband(λ) within the framework of this approach demonstrated that under room temperature the major contribution was from the scattering by polar optical phonons. In the case of less perfect MnxHg1−xTe however, one should take into account the scattering by the short-range potentials of the defects. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
