Materials engineering for optoelectronic crystals related to III–V compounds

An introductory glimpse of modern approaches to the application of productive and reasonable techniques for the defined electronic materials will be presented. The paper is divided into four parts. Each is supplemented with illustrations. The first part explains the meaning of materials engineering for electronics (MEE) and for optoelectronic crystals in particular. Its interdisciplinarity is shown and also the range of problems it can solve. Graduate courses of someMEE disciplines are also given. The second part of the paper related to the feasible solution withMEE as to the optimal realization of the application requirements. The physical modelling, databases and characterization techniques are given. The third part deals with particular materials: III–V semiconductors. A brief survey of the best methods of crystal growth is given, stressing those which imply a possibility of creating crystals defined up to the atomic range. The last part is devoted to our team's orginal crystal growth methods:CAM-S (A Crystallization Method Providing Composition Autocontrol in Situ) andCOM-S (Calculation Method of Optimal Molten-Solution Composition). The combination of these methods, further modified with vibrational and magneto-hydrodinamical stirring (VS, MHD-S), allows us to grow crystalline ingots of ternary solid solutions (TSS) possessing extreme homogeneity. Illustrations on In?Ga?Sb system are supplied. We conclude with a discussion of the impact of such methods and approaches on a device quality and to other fields.