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基于0.13微米锗硅BiCMOS工艺的80 Gb/s 2:1 复接器
引用本文:赵衍,王志功,李伟.基于0.13微米锗硅BiCMOS工艺的80 Gb/s 2:1 复接器[J].半导体学报,2009,30(2):025008-4.
作者姓名:赵衍  王志功  李伟
摘    要:本文介绍了基于0.13微米锗硅BiCMOS工艺设计的超高速2:1复接器芯片,工艺fT为103 GHz。为了最大限度提高工作速度,系统方案进行了优化,采用了选择器输出直接驱动片外50 Ω负载的形式,并在输入级集成了两个宽带数据放大器和一个时钟放大器。经测试,芯片输出眼图达到了80 Gb/s的速率,单端电压摆幅为160 mV。

关 键 词:希尔伯特单元,复接器,选择器,超高速集成电路,宽带放大器。
收稿时间:8/11/2008 9:42:10 AM
修稿时间:9/22/2008 2:37:44 PM

80 Gb/s 2:1 multiplexer in 0.13-mm SiGe BiCMOS technology
Zhao Yan,Wang Zhigong and Li Wei.80 Gb/s 2:1 multiplexer in 0.13-mm SiGe BiCMOS technology[J].Chinese Journal of Semiconductors,2009,30(2):025008-4.
Authors:Zhao Yan  Wang Zhigong and Li Wei
Institution:Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
Abstract:This work presents an ultra-high speed 2:1 multiplexer (MUX) in a SiGe BiCMOS technology with fT= 103 GHz. To boost the operating speed, the system scheme is optimized including a 2:1 selector circuit directly driving an external 50 W load, and two wide-band data buffers and one clock buffer in the input stage. The chip exhibited an open eye at 80 Gb/s with a 160 mV single-ended voltage swing.
Keywords:Gilbert cell  multiplexer  selector  ultrahigh-speed integrate circuit  wideband buffer
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