Ellipsometric in situ measurements during deposition of amorphous CuxSn100−x films

Amorphous metallic films are produced by quench condensation onto a 4K cold Si substrate under ultra high vacuum conditions. During evaporation the film growth is recorded in situ ellipsometrically. At the same time the mass of the film is measured with quartz microbalances. It is shown that the dielectric constants are dependent on film thickness. Different film models for evaluating the ellipsometric measurements are used and tested. The influence of porosity and interface roughness is taken into account. The dependence of mass density on thickness is mainly understood in terms of island growth. The dependence of the dielectric constant on concentration is discussed with respect to the Faber-Ziman theory.Dedicated to Prof. Dr. G. von Minnigerode on the occasion of his 60th birthday