Study of （Ga,Mn）N prepared by Mn-ion implantation using optical techniques

This paper reports that （Ga, Mn）N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraetion（XRD）. Detailed XRD measurements have revealed the characteristic of Mn-ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566 cm-1 identified as EI（LO）, A1 （LO） and E~, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650 725, 363, 506cm^-1 and the vicinity of E~ mode. The modes observed at 182, 288, 650 725em 1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the （Ga, Mn）N, which are in fair agreement with the standard theoretical results.

Study of (Ga, Mn)N prepared by Mn-Ion implantation using optical techniques

This paper reports that (Ga, Mn)N is prepared using implantation of3at.% Mn Ions into undoped GaN. Structural characterization ofthe crystals was performed using x-ray diffraction(XRD). DetailedXRD measurements have revealed the characteristic of Mn-Ionimplanted GaN with a small contribution of other compounds. WithRaman spectroscopy measurements, the spectra corresponding to theintrinsic GaN layers demonstrate three Raman active excitations at747, 733 and 566,cm^-1 identified as E_-1(LO),$A₁(LO) and E₂^H, respectively. The Mn-doped GaN layersexhibit additional excitations at 182, 288, 650--725, 363,506cm^-1 and the vicinity of $E₂^H mode. The modesobserved at 182, 288, 650--725,cm^-1 are assigned tomacroscopic disorder or vacancy-related defects caused by Mn-ionimplantation. Other new phonon modes are assigned toMn_x-N_y, Ga_x-Mn_y modes and the local vibrationalmode of Mn atoms in the (Ga, Mn)N, which are in fair agreement withthe standard theoretical results.