Polarization dependence of intersubband absorption and photoconductivity in p-type SiGe quantum wells |
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| Affiliation: | 1. Institut für Halbleiterphysik, Universität Linz, A-4040, Linz, Austria;2. Walter Schottky Institut, TU Munchen, D-85784, Garching, Germany;1. Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai, 200433, China;2. Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Zhejiang, 315327, China;3. Key Laboratory of Instrumentation Science & Dynamic Measurement, School of Instrument and Electronics, North University of China, Taiyuan, 030051, China;4. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China;5. Shenzhen HUASUAN Technology Co., Ltd, 4168 Liuxian Ave, Nanshan District, Shenzhen, 518055, China;1. College of Science, Hunan University of Science and Engineering, Yongzhou, 425199, China;2. College of Physics, Taiyuan University of Technology, Taiyuan, 030024, China |
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| Abstract: | We present a detailed study of the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration ofps2.8×1012 cm2, bothp- ands-polarized absorptions have been observed and transitions to several excited states are clearly identified by comparison with self-consistent Luttinger-Kohn type calculations. The photoconductivity is surprisingly insensitive to the polarization, which indicates the importance of the subsequent transport process on the photocurrent responsitivity. |
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