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直流磁控溅射一步法原位制备MgB2超导薄膜
引用本文:马平,刘乐园,张升原,王昕,谢飞翔,邓鹏,聂瑞娟,王守证,戴远东,王福仁. 直流磁控溅射一步法原位制备MgB2超导薄膜[J]. 物理学报, 2002, 51(2): 406-409
作者姓名:马平  刘乐园  张升原  王昕  谢飞翔  邓鹏  聂瑞娟  王守证  戴远东  王福仁
作者单位:人工微结构和介观物理国家重点实验室,北京大学物理系,北京100871
基金项目:国家高技术研究发展计划 (批准号 :86 3 CD0 5 0 10 1);国家重点基础研究 ( 973)专项经费 (批准号 :G19990 6 46 0 9;G19990 6 46 0 7)资助的课题
摘    要:用MgB2靶,控制直流磁控溅射工作在异常辉光放电或弧光放电状态,在SrTiO3衬底上原位一次性得到了MgB2超导薄膜,其起始转变温度为32K,零电阻温度为15K.关键词:高温超导体超导薄膜磁控溅射二硼化镁

关 键 词:高温超导体  超导薄膜  磁控溅射  二硼化镁
收稿时间:2001-07-20
修稿时间:2001-08-09

Single-step in-situ preparation of magnesium diboride superconducting thin films by dc magnetron sputtering
Ma Ping Liu Le-Yuan Zhang Sheng-Yuan Wang Xin Xie Fei-Xiang Deng PengNie Rui-Juan Wang Shou-Zheng Dai Yuan-Dong Wang Fu-Ren. Single-step in-situ preparation of magnesium diboride superconducting thin films by dc magnetron sputtering[J]. Acta Physica Sinica, 2002, 51(2): 406-409
Authors:Ma Ping Liu Le-Yuan Zhang Sheng-Yuan Wang Xin Xie Fei-Xiang Deng PengNie Rui-Juan Wang Shou-Zheng Dai Yuan-Dong Wang Fu-Ren
Abstract:In a single-step in-situ procedure,the superconducting MgB 2 (101) highly oriented thin films have been successfully grown on the SrTiO 3 (100) substrates by using the synthesised MgB 2 target and controlling the magetron sputtering working at the state of abnormal glow discharge or arc discharge.The fillms have a zero resistance transition temperature of 15K and an onset transition temperature of 33K.
Keywords:high-temperature superconductor   superconducting thin films   magnetron sputtering   MgB 2  
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