Influence of the substrate temperature during deposition on film characteristics of copper phthalocyanine and field-effect transistor properties |
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| Authors: | K. Xiao Y. Liu G. Yu D. Zhu |
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| Affiliation: | (1) Center for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, 100080 Beijing, P.R. China |
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| Abstract: | In this paper, we employ different substrate temperatures during the deposition process and observe a highly ordered structure and strong orientation of copper phthalocyanine (CuPc) molecules on Si/SiO2 by using X-ray-diffraction and transmission electron microscopy analysis. The results show the effect of CuPc morphology at different substrate temperatures on the organic field-effect-transistor performance. When the substrate temperature for deposition of CuPc is 120 °C, a mobility of 3.75×10-3 cm2/V s can be obtained. PACS 73.61.Ph; 85.30.Tv; 78.66.Tr |
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