基于智能剥离技术的SOI材料制备

优化了硅片低温直接键合与智能剥离技术的工艺流程，在550℃，2.1×10^-2 Pa条件下制备了SOI材料，其顶层单晶Si膜的表面粗糙度为8.5 nm，缺陷密度为90 cm^-2，键合强度达到153.7 kg/cm²，形成的SOI结构除了可以形成三维集成电路中有源层间良好的绝缘层，避免了高温过程对有源层器件结构、材料及性能的影响，还能为三维集成电路后续有源层的制造提供高质量的单晶硅材料. 关键词： 绝缘体上硅 智能剥离 低温直接键合

Fabrication of SOI material based on smart-cut technology

The process of the low-temperature-direct-bonding and smart-cut technologies is optimized, and the SOI material is fabricated at 550℃ under 2.1×10^-2 Pa. The bonding strength of this structure is 153.7 kg/cm², the total thickness variation and the defect density of the top monocrystalline silicon film are 8.5 nm and 90 cm^-2, respectively. This method can produce a good insulator layer between active layers in the fabrication of the three-dimensional integrated circuits (3D ICs), avoiding the unfavorable effects of the high-temperature process on the device structure, material quality and performance of the active layers. At the same time, the high quality monocrystalline silicon layer can be available for producing subsequent active layers in the fabrication of the 3D ICs.