Formation of AlxGa1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE |
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Authors: | Junichiro Takeda Masashi Akabori Junichi Motohisa Takashi Fukui |
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Affiliation: | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Kita-ku, Sapporo 060-8628, Japan |
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Abstract: | A two-dimensional (2D) periodic array having air/semiconductor interfaces can be applied to photonic crystals (PCs), which are expected to control spontaneous emission and optical transports in the next-generation devices. In this paper, we report on the selective area metal-organic vapor phase epitaxial (SA-MOVPE) growth of a AlxGa1−xAs 2D periodic array on a GaAs (1 1 1)B substrate for application to 2DPCs having GaAs/AlGaAs heterostructures. AlxGa1−xAs (x=0, 0.25 and 0.50) growth was carried out on triangular lattice array of hexagonal GaAs openings and hexagonal SiNx masks. A uniform Al0.50Ga0.50As hexagonal pillar array and a GaAs hexagonal air-hole array with a 1 μm-period were successfully obtained. The important growth parameter for uniform 2DPC structure formation by SA-MOVPE was clarified. Furthermore, we describe the successful demonstration of a 400 nm-period pillar array and an air-hole array, which corresponds to the optical communication wavelength λ=1.3–1.55 μm. The results indicate that SA-MOVPE method is very promising for the formation of uniform semiconductor 2DPCs without the occurrence of process-induced damages. |
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Keywords: | Selective area MOVPE Pillar array Air-hole array |
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