Near-infrared intersubband absorption in (CdS/ZnSe)/BeTe type-II super-lattices grown on GaAs substrate by MBE |
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Authors: | BS Li R Akimoto K Akita T Hasama |
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Institution: | aUltrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan |
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Abstract: | We study the dependence of absorption wavelength on the well width in the (CdS/ZnSe)/BeTe super-lattices(SL). With well-width reduction, the wavelength decreases from 1.795 to 1.57 μm. Structural properties, strain state and interface composition are determined via XRD measurement. A (CdS/ZnSe)/BexMg1−xTe structure is prepared and XRD reveals the average lattice constant match to GaAs substrate. TEM reveals that numerous stacking faults exist in the (CdS/ZnSe)/BeTe structure, and stacking faults are completely suppressed in (CdS/ZnSe)/BexMg1−xTe SLs. Intersubband transition down to 1.535–1.55 μm have been observed in SLs. |
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Keywords: | II– VI compounds ISB-T XRD TEM |
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