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Shaped crystal growth and scintillating properties of Yb:(Gd,Lu)3Ga5O12 solid solutions
Authors:A Novosselov  A Yoshikawa  M Nikl  N Solovieva  J -H Lee  T Fukuda
Institution:

a Fukuda Laboratory, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

b Institute of Physics AS CR, Cukrovarnicka 10, Prague 162 53, Czech Republic

c Japan Science Technology Corporation, 6-6-5 Minamiyoshinari, Aoba-ku, Sendai 989-3204, Japan

Abstract:Shaped single crystals of (LuxGd1?x)3Ga5O12 (0.0less-than-or-equals, slantxless-than-or-equals, slant1.0) and (Yb0.05LuxGd0.95?x)3Ga5O12 (0.0less-than-or-equals, slantxless-than-or-equals, slant0.9) were grown by the modified micro-pulling-down method. Continuous solid solutions with garnet structure and a linear compositional dependency of crystal lattice parameter in the system Yb:(Gd,Lu)3Ga5O12 are formed. Measured optical absorption spectra of the samples show 4f–4f transitions related to Gd3+ ion at 275 and 310 nm, and also an onset of charge transfer transitions from oxygen ligands to Gd3+ or Yb3+ cations below 240 nm. A complete absence of Yb3+ charge transfer luminescence under X-ray excitation in any of the investigated samples was explained by the overlapping of charge transfer absorption of Yb3+ by that of Gd3+ ions. For specific composition of Lu1.5Gd1.5Ga5O12 an intense defect-host lattice-related emission, which achieve of about 40% integrated intensity compared with Bi4Ge3O12, was found.
Keywords:Garnet  Shaped single crystal growth  Yb3+ doping  Scintillating properties
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