不同形貌ZnSe的制备及光电化学性能

采用水热法制备了ZnSe纳米棒和微球, 用XRD, TGA-DTA和SEM等技术对其进行了表征, 提出了解释ZnSe微球的形成新机理. 研究结果表明, 纳米棒直径为50~100 nm, 棒长约为200~300 nm, ZnSe微球直径为3~10 μm.; 纳米棒在反应温度为240 ℃时具有闪锌矿和纤维锌矿型混晶结构, 微球在反应温度为210 ℃时具有闪锌矿结构; 将ZnSe纳米棒和微球均匀地涂在导电玻璃的导电面上, 于380 ℃煅烧40 min后制成膜电极, 并进行了光电化学研究, 纳米棒膜结构电极最高单色光的光电转换效率(IPCE)可达到9.09%.

Preparation and Photoelectrochemical Properties of ZnSe Nanorods and Spherical ZnSe Particles

ZnSe nanorods and ZnSe spheres were prepared with hydrothermal method, the products were characterized with XRD, TGA-DTA, SEM, the possible formation mechanism involving a co-growth process is proposed. The results show that the nanorod was formed approximately with the diameter of 50—100 nm and the length of 200—300 nm, the diameters of the spherical ZnSe ranged from 3 to 10 μm. The mixture of zinc blende and wultize structures of ZnSe nanorods could be obtained at reaction temperature of 240 ℃ and the zinc blende structure of ZnSe spheres could be obtained at reaction temperature of 210 ℃; The ZnSe nanorods/ITO film and spheres/ITO were sintered at 380 ℃ for 40 min. Photoelectrochemical properties of ZnSe nanorods and ZnSe spheres were studied. The maximum IPCE of ZnSe nanorods measured was 9.09%.