| Abstract: | The intersubband scattering of charge carriers in semiconductor quantum wells as a result of their Coulomb interaction has
been theoretically investigated. Analytical expressions for the rate of intersubband transitions in the process of electron—electron
and electron—hole collisions have been derived in the Born approximation. The theoretical and experimental data on the photoluminescence
decay time, obtained for the case of a nondegenerate distribution of charge carriers, were in qualitative agreement.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 782–787, November–December, 2005. |
