Light absorption in disordered semiconductors with a random Coulomb-type field |
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Authors: | Yu D Arbuzov V M Evdokimov M Yu Kolenkin |
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Institution: | (1) All-Union Scientific-Research Institute of Telemechanics, USSR |
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Abstract: | A method is proposed for the formulation of an asymptotic series for the light absorption coefficient in disordered semiconductors with a random field of the Coulomb type. It is shown that the series is obtained by expanding the exponent of an exponential function in powers of a parameter proportional to (Eg–![hstrok](/content/r5624678254g5144/xxlarge295.gif) )–1/3, where Eg is the band gap of the semiconductor, and ![hstrok](/content/r5624678254g5144/xxlarge295.gif) is the photon energy. The first three terms of the series are calculated in explicit form.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 28–32, January, 1988. |
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