Surface (110) of elementary semiconductors with diamond-type structure during stratified growth from an atomic beam in a vacuum

The stratified growth of an ideal crystal with diamond structure from an atomic beam in a vacuum is investigated by using the kinetic method of the theory of crystal growth. Equations are obtained to determine the mean concentrations _n of molecules consisting of n atoms on the (110) surface of the crystal. In the stationary case, an approximate analytic solution is obtained with a nonlinear dependence of ₁, ₂, and on the atomic beam density.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 92–96, Decmeber, 1981.