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高比表面积多孔Si层柱蒙脱土材料的合成和表征
引用本文:许鸿雁,鲍晓军,王廷海,王永刚. 高比表面积多孔Si层柱蒙脱土材料的合成和表征[J]. 燃料化学学报, 2008, 36(2): 250-253
作者姓名:许鸿雁  鲍晓军  王廷海  王永刚
作者单位:1. The Key Laboratory of Catalysis, China National Petroleum Corporation, Department of Chemical Engineering,China University of Petroleum (Beijing), Beijing 102249, China; 2. College of Resources and Environment, Hebei Polytechnic University, Tangshan 063009, China;3. School of Chemical and Environmental Engineering, China University of Mining and Technology, Beijing 100083, China
基金项目:国家重点基础研究发展计划(973计划) , 河北省唐山市重点实验室基金
摘    要:汽车排放是大气的重要污染源之一。柴油中的含硫分子燃烧后产生的硫氧化物直接导致酸雨,也是城市氮氧化物和颗粒物排放的主要来源。为减少柴油中硫对环境的危害,世界各国相继颁布了严格的柴油含硫标准,加之市场对超低硫柴油的需求,使得各种柴油脱硫技术的开发成为一大热点。而开发高活性的加氢脱硫催化剂则是既经济又简单的方法。

关 键 词:蒙脱土  X射线衍射  Si层柱蒙脱土  
文章编号:0253-2409(2008)02-250-04
收稿时间:2007-06-19
修稿时间:2007-06-19

Synthesis and characterization of porous silica-pillared montomorillonites with high surface area
XU Hong-yan,BAO Xiao-jun,WANG Ting-hai,WANG Yong-gang. Synthesis and characterization of porous silica-pillared montomorillonites with high surface area[J]. Journal of Fuel Chemistry and Technology, 2008, 36(2): 250-253
Authors:XU Hong-yan  BAO Xiao-jun  WANG Ting-hai  WANG Yong-gang
Abstract:Using natural Na montmorillonite as the host clay, porous silica pillared montmorillonites (Si PILC) were prepared by the template synthesis method. Furthermore, the texture and structure of such composite materials were investigated by using modern several physicochemical techniques such as powder X-ray Diffraction (XRD), X-ray Fluorescence (XRF), Fourier Transformation Infra red Spectra (FT IR), and N2 adsorption/desorption measurements. The results reveal that tetrathylorthosilicate (TEOS) agent has been successfully intercalated into the montmorillonite and the characteristic d001 spacing of Si PILC increases from 1.28nm to 3.15nm. The resultant products with large gallery height possess BJH pore volume as large as 0.30cm3/g, remarkably high BET specific surface area of over 592.0m2/g, pore size distribution in the mesopore region 3.3nm~4.3nm after thermal treatment at 800℃.
Keywords:X-ray diffraction  Si PILC  
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