| 高亮度GaAlAs单异质结红光二极管 |
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| 引用本文： | 罗宗铁,何胜夫.高亮度GaAlAs单异质结红光二极管[J].发光学报,1993,14(4):320-324. |
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| 作者姓名： | 罗宗铁 何胜夫 |
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| 作者单位： | 中国科学院长春物理研究所, 长春 130021 |
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| 摘 要： | 本文从工业生产角度对GaAlAs单异质结红光二极管的芯片制作技术作了细致研究.设计出能同时生长多枚外延片的新结构生长舟,选择了合适的管芯参数与生长条件,制定出稳定重复的工艺流程.用本项技术制出的单异质结管芯,发光波长为660nm,平均亮度达到4.5mcd/20mA,最高亮度达6.2mcd.
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| 关 键 词： | 红光二极管 GaAlAs单异质结 |
| 收稿时间： | 1993-04-07 |
HIGH BRIGHTNESS SH GaAlAs RED LIGHT-EMITTING DIODES |
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| Luo Zhongtie He Shengfu Dong Ping Li Xiangwen Wei Wenchao Zhao Yu.HIGH BRIGHTNESS SH GaAlAs RED LIGHT-EMITTING DIODES[J].Chinese Journal of Luminescence,1993,14(4):320-324. |
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| Authors: | Luo Zhongtie He Shengfu Dong Ping Li Xiangwen Wei Wenchao Zhao Yu |
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| Institution: | Changchun Institute of Physics, Academia Sinica, Changchun 130021 |
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| Abstract: | The fabrication technology in quantity of GaAlAs single heterostruc-ture red LED's has been investigated in detail. A growth boat with new structure has been designed to carry out simultaneous LPE growth on many substrates. An effort has been made to obtain the optimum solution composition and the best growth parameters. A growth process for epitaxial wafers with excellent proformance and good reproducibility has been established. The LED's dices fabricated by this process have emission wavelength of 660mm, mean brightness of 4.5mcd at 20mA and the highest value of 6.2mcd. |
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| Keywords: | red LED's GaAlAs single heterostructure |
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