Formation of a √3 × √3 surface on Si/Ge(1 1 1) studied by STM and LEED |
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Authors: | Jacek R Osiecki RIG Uhrberg |
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Institution: | aDepartment of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden |
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Abstract: | We have performed a detailed study of the formation and the atomic structure of a √3 × √3 surface on Si/Ge(1 1 1) using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Both experimental methods confirm the presence of a √3 × √3 periodicity but unlike the Sn/Ge(1 1 1) and the Sn/Si(1 1 1) surfaces, the Si/Ge(1 1 1) surface is not well ordered. There is no long range order on the surface and the √3 × √3 reconstruction is made up of double rows of silicon atoms separated by disordered areas composed of germanium atoms. |
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Keywords: | Surface atomic structure Ge(1  1  1) Si deposition Scanning tunneling microscopy Low energy electron diffraction |
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