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Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings |
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| Authors: | T W Du Bosq R E Peale E W Nelson A V Muravjov D A Walters G Subramanian K B Sundaram C J Fredricksen |
| Institution: | a Department of Physics, University of Central Florida, Orlando, FL 32816, USA;b Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA;c Zaubertek, Inc. 12565 Research Parkway Suite 300, Orlando, FL 32826, USA |
| Abstract: | A lamellar mirror made from Si wafer by anisotropic chemical etching and coated with gold has been demonstrated as an intracavity wavelength selector for the far-infrared p-Ge laser. The etching process produces rectangular grooves with precisely predetermined depth and 100 nm surface smoothness. This lamellar-grating structure defines the resonant laser wavelength within the broad tuning range of the p-Ge laser. Single wavelength laser operation with this mirror has been demonstrated on the third-order resonance with an active cavity finesse of at least 0.09. |
| Keywords: | Terahertz Germanium Laser |
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