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1180 nm Raman laser operation of end-pumping Nd:GdAl3(BO3)4/SrWO4 crystal |
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| Authors: | F. G. Yang Y. Zhang X. H. Hu Y. G. Ke L. Qiao S. Z. Hu Y. H. Wu Z. C. Xia D. X. He Z. Y. You C. Y. Tu |
| Affiliation: | 1. Department of Electronic Information Science, Fujian Jiangxia University, Fuzhou, Fujian, 350108, China 2. Key Laboratory of Photo-electricity Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China |
| Abstract: | We present an end-pumped continuous-wave Raman laser at 1180 nm with a 60 mm long pure crystal SrWO4 and an Nd:GdAl3(BO3)4 crystal. The highest output power Raman laser at 1180 nm is 15.5 mW corresponding to the pump power of 1.75 W. Results indicate that the intense self-doubling frequency effect of GdAl3(BO3)4 reduces the 1180 nm Raman laser output. |
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